(China (Mainland))
Product Summary
The 2N6768 is a power MOSFET.
Parametrics
Absolute maximum ratings: (1)Gate-Source Voltage:±20V; (2)Pulsed Drain Current:56A; (3)Power Dissipation @ Tcase = 25℃:150W; (4)Linear Derating Factor:1.2W/℃; (5)Single Pulse Avalanche Energy:11.3mJ; (6)Avalanche Current:14A; (7)Repetitive Avalanche Energy:15mJ; (8)Peak Diode Recovery:4.0V/ns; (9)Operating and Storage Temperature Range:-55℃ to +150℃.
Features
Features: (1)repetitive avalanche ratings; (2)dynamic DV/DT rating; (3)hermeticall sealed; (4)simple drive requirements; (5)ease of paralleling.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2N6768 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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2N6714STZ |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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2N6715 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Med Power |
Data Sheet |
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2N6716 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Med Power |
Data Sheet |
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2N6718 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Med Power |
Data Sheet |
Negotiable |
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2N6716STOB |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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2N6717 |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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